Crystal structures of BaMgF4-xOxn thin films

Xiaoli Wang*, Shinobu Fujihara, Toshio Kimura, Haydn Chen

*Corresponding author for this work

研究成果: Conference article同行評審

5 引文 斯高帕斯(Scopus)

摘要

A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified.

原文English
頁(從 - 到)121-126
頁數6
期刊Ferroelectrics
264
發行號1
DOIs
出版狀態Published - 1 十二月 2001
事件3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China
持續時間: 12 十二月 200015 十二月 2000

指紋 深入研究「Crystal structures of BaMgF<sub>4-x</sub>O<sub>xn</sub> thin films」主題。共同形成了獨特的指紋。

引用此