Crystal quality and light output power of GaN-based LEDs grown on concave patterned sapphire substrate

Yew-Chuhg Wu*, A. Panimaya Selvi Isabel, Jian Hsuan Zheng, Bo Wen Lin, Jhen Hong Li, Chia Chen Lin

*Corresponding author for this work

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.

原文English
頁(從 - 到)1993-1999
頁數7
期刊Materials
8
發行號4
DOIs
出版狀態Published - 1 一月 2015

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