Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n+ type doped GaAs

Y. S. Chen*, K. S. Wu, D. P. Wang, Kai-Feng Huang, T. C. Huang

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Electroreflectance of surface-intrinsic-n+ type doped GaAs has been measured over a various biased voltage. The spectra have exhibited many Franz-Keldysh oscillations (FKOs) above band gap energy Eg. The electric field F and critical point energy Ec can be determined from the slope and intercept of FKOs fitting. Hence, we can obtain Ec as a function of F. In most of previous works, Ec is taken as E g. However, it was found that Ec increases with F in this work. In order to explain this, the gain of energy of electron and hole in F was discussed.

原文English
頁(從 - 到)4064-4066
頁數3
期刊Applied Physics Letters
85
發行號18
DOIs
出版狀態Published - 1 十一月 2004

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