Creation of in-plane anisotropic strain in GaAs/AlXGa1-XAs multiple quantum well structures

Y. Lu*, Hao-Chung Kuo, H. Shen, M. Taysing-Lara, M. Wraback, J. Pamulapati, M. Dutta, J. Kosinski, R. Sacks

*Corresponding author for this work

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

Thin film of GaAs/AlGaAs multiple quantum well (MQW) structure have been bonded to the lithium tantalate (LiTaO3) or calcium carbonate (CaCO3) substrates cut such that one of the linear thermal expansion coefficients almost matches that of the MQW while its orthogonal counterpart does not. By choosing the proper bonding and operating temperatures, in-plane anisotropic strain up to 0.3% has been achieved. The transmission spectrum shows an anisotropy in excitonic absorption which results in a polarization rotation of a light beam at normal incidence to the structure. The theoretical calculation is in agreement with the experimental results. Using the polarization rotation, we have demonstrated a novel MQW light modulator with an exceedingly high contrast ratio of 330:1.

原文English
主出版物標題III-V Electronic and Photonic Device Fabrication and Performance
編輯K.S. Jones, S.J. Pearton, H. Kanber
發行者Publ by Materials Research Society
頁面537-542
頁數6
ISBN(列印)1558991964
DOIs
出版狀態Published - 1 十二月 1993
事件Materials Research Society Spring Meeting - San Francisco, CA, USA
持續時間: 12 四月 199315 四月 1993

出版系列

名字Materials Research Society Symposium Proceedings
300
ISSN(列印)0272-9172

Conference

ConferenceMaterials Research Society Spring Meeting
城市San Francisco, CA, USA
期間12/04/9315/04/93

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