Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices

C. Y. Hsueh, T. L. Huang, K. P. Peng, M. H. Kuo, Horng-Chih Lin, Pei-Wen Li

研究成果: Conference contribution

摘要

We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength-tunable photodetectors, and MOSFETs.

原文English
主出版物標題2017 Silicon Nanoelectronics Workshop, SNW 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面107-108
頁數2
ISBN(電子)9784863486478
DOIs
出版狀態Published - 29 十二月 2017
事件22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
持續時間: 4 六月 20175 六月 2017

出版系列

名字2017 Silicon Nanoelectronics Workshop, SNW 2017
2017-January

Conference

Conference22nd Silicon Nanoelectronics Workshop, SNW 2017
國家Japan
城市Kyoto
期間4/06/175/06/17

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  • 引用此

    Hsueh, C. Y., Huang, T. L., Peng, K. P., Kuo, M. H., Lin, H-C., & Li, P-W. (2017). Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices. 於 2017 Silicon Nanoelectronics Workshop, SNW 2017 (頁 107-108). [8242320] (2017 Silicon Nanoelectronics Workshop, SNW 2017; 卷 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242320