CO2 laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO2

Chun Jung Lin*, Yu Lun Chueh, Li Jen Chou, Hao-Chung Kuo, Gong Ru Lin

*Corresponding author for this work

研究成果: Conference article同行評審

摘要

Localized synthesis of 3-8 nm Si nanocrystals (nc-Si) in PECVD-grown Si-rich SiO2 (SRSO) film is demonstrated using CO2 laser annealing at an intensity below the ablation-threshold (6.0 kW/cm2). At an optimized surface temperature of 1285°C, the precipitated nc-Si in CO2-laser-annealed SRSO film results in near-infrared photoluminescence (PL) at 806 nm, whereas the ablation damage induced at higher laser intensities as well as temperatures results in blue PL at 410 nm related to structural defects. The refractive index of the laser-annealed SRSO at 633 nm increases from 1.57 to 2.31 as the laser intensity increases from 1.5 to 6.0 kW/cm2. Transmission electron microscopy analysis reveals that the average size and volume density of Si nanocrystals embedded in the SRSO film are about 6 nm and 4.5×1016 cm-3, respectively. The CO2 laser annealing with controlled intensity and spot size can potentially accomplish in-situ, localized annealing of the SRSO film without causing irreversible damage to nearby electronics.

原文English
文章編號A19.2
頁(從 - 到)325-330
頁數6
期刊Materials Research Society Symposium Proceedings
862
DOIs
出版狀態Published - 1 十二月 2005
事件2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
持續時間: 28 三月 20051 四月 2005

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