CORRELATION OF BREAKDOWN SUSCEPTIBILITY IN THIN THERMAL SiO//2 WITH PROCESS-DEPENDENT POSITIVE CHARGE TRAPPING.

S. Holland*, Chen-Ming Hu

*Corresponding author for this work

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

指紋 深入研究「CORRELATION OF BREAKDOWN SUSCEPTIBILITY IN THIN THERMAL SiO//2 WITH PROCESS-DEPENDENT POSITIVE CHARGE TRAPPING.」主題。共同形成了獨特的指紋。

Engineering & Materials Science