Controlling the spin-torque efficiency with ferroelectric barriers

Artur Useinov, M. Chshiev, A. Manchon

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

原文English
文章編號064412
期刊Physical Review B - Condensed Matter and Materials Physics
91
發行號6
DOIs
出版狀態Published - 11 二月 2015

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