Controlled synthesis of VO2(R), VO2(B), and V 2O3 vanadium-oxide nanowires

Jhih Syuan Ke, Sheng Feng Weng, Ming Cheng Wu, Chi-Shen Lee*

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Vanadium-oxide nanowires (NWs) V2O5, VO 2(R), VO2(B), and V2O3 are deposited on a substrate to study their field-emission properties. V2O 5 NWs are prepared by thermal evaporation via vapor transport of a vanadium-oxide complex under mild conditions. Films of VO2 and V 2O3 wires are subsequently prepared by reducing V 2O5 one-dimensional nanocrystals at 450 C with hydrogen gas. The composition of the flowing H2/Ar mixture and the duration of reduction are utilized to control the formation of VO2(R) or VO 2(B) NWs. The crystallinity and morphology of products as prepared are characterized using several techniques, including powder X-ray diffraction, a scanning electron microscope, and a transmission electron microscope. The field-emission properties of the vanadium-oxide NWs as prepared exhibit a turn-on field of 4.56-7.65 V/μm and an emission current density up to 3.68-8.36 mA/cm2. These features indicate that vanadium-oxide NWs have potential FE emitter applications. Graphical Abstract: V2O 5, VO2(R), VO2(B), and V2O 3 NWs were synthesized via thermal evaporation and controlled reduction process. Field-emission properties of these NWs exhibited turn-on fields of 4-8 V/μm, an emission current density up to 3.5 mA/cm 2.[Figure not available: see fulltext.]

原文English
文章編號1632
期刊Journal of Nanoparticle Research
15
發行號7
DOIs
出版狀態Published - 13 六月 2013

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