Computer simulation of electron energy states for three-dimensional InAs/GaAs semiconductor quantum rings

Yi-Ming Li*, O. Voskoboynikov, C. P. Lee

*Corresponding author for this work

研究成果: Conference contribution同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, (iii) the finite hard wall confinement potential, and (iv) the Ben Daniel-Duke boundary conditions. We solve the 3D model by nonlinear iterative algorithm to obtain self-consistent solutions. The model and simulation provide a novel way to calculate the energy levels of nano-scopic semiconductor quantum ring. They are useful to clarify the principal dependencies of quantum ring energy states on material band parameter, ring size and shape.

原文English
主出版物標題2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
編輯M. Laudon, B. Romanowicz
頁面540-543
頁數4
出版狀態Published - 一月 2002
事件2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, Puerto Rico
持續時間: 21 四月 200225 四月 2002

出版系列

名字2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Conference

Conference2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
國家Puerto Rico
城市San Juan
期間21/04/0225/04/02

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