Complementary UWB LNA design using asymmetrical inductive source degeneration

Hui I. Wu*, Shu-I Hu, Christina F. Jou

*Corresponding author for this work

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

This letter proposes a novel LNA design method where the complementary transistor topology is combined with asymmetrical inductive source degeneration to achieve matched input impedance over a wide bandwidth. A 210 GHz LNA is designed and fabricated using a commercial 0.18 μm RF-CMOS process to verify the feasibility of our proposed method. In the intended bandwidth, this LNA has matched input impedance, 20 dB power gain, and 2.43.4 dB noise figure, with 25.65 mW power consumption.

原文English
文章編號5481981
頁(從 - 到)402-404
頁數3
期刊IEEE Microwave and Wireless Components Letters
20
發行號7
DOIs
出版狀態Published - 1 七月 2010

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