Comparison of the three classes (rare earth, refractory and near-noble) of silicide contacts

R. D. Thompson*, King-Ning Tu

*Corresponding author for this work

研究成果: Article同行評審

52 引文 斯高帕斯(Scopus)

摘要

It is well established that near-noble metals and refractory metals form two distinct classes of silicide contacts with silicon. Rare earth metals have been studied in the same manner and found to form a new class that is very distinct from the other two in terms of properties and characteristics. Some of these characteristics are the formation of a disilicide phase, as an apparently first and last phase, at a surprisingly low temperature (250-400 °C). Marker motion study using implanted krypton and argon showed silicon to be the dominant diffusing species for ErSi2. The Schottky barrier height to n-Si is 0.40 ± 0.04 e V and to p-Si is 0.70 ± 0.04 e V for all six of the metals studied. The surface morphology after reaction indicates the formation of a tensile stress by the silicide reaction. Oxidation of the rare earth metals is a severe problem although a variety of passivation schemes have been shown to work.

原文English
頁(從 - 到)265-274
頁數10
期刊Thin Solid Films
93
發行號3-4
DOIs
出版狀態Published - 23 七月 1982

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