Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors

M. C. Chen*, S. H. Ku, C. T. Chan, Ta-Hui Wang

*Corresponding author for this work

研究成果: Article同行評審

摘要

A oxide breakdown (BD) progression in ultra-thin oxide silicon-on-insulator (SOI) and bulk metal-oxide-semiconductor field effect transistors (MOSFET) was investigated. It was observed that the enhanced BD progression was due to the increase of hole stress current resulting from breakdown induced channel carrier heating in a floating-body configuration. The hole tunneling current and hot carrier luminescence measurement were analyzed numerically. The hole stress current was found to be dominated the gate stress during BD evolution and was increased with a forward body bias.

原文English
頁(從 - 到)3473-3477
頁數5
期刊Journal of Applied Physics
96
發行號6
DOIs
出版狀態Published - 15 九月 2004

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