Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS2

Chi Feng Li, Yun Yan Chung, Chao Ting Lin, Yen Teng Ho, Chao Hsin Chien

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this work, we adopted two kinds of TLM structures to extract the top (vertical) and the edge (horizontal) contact resistances of Metal/MoS2 directly from experimental results. Novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on the sapphire substrate. We found the edge contact resistivity (ρC-edge) was almost 2 orders of magnitude lower than (ρC-top). Our approach seems to be a reliable and simple way to precisely determine the edge and top contact resistances of the Metal/2D contact.

原文English
主出版物標題2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁面191-193
頁數3
ISBN(電子)9781538665084
DOIs
出版狀態Published - 三月 2019
事件2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
持續時間: 12 三月 201915 三月 2019

出版系列

名字2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
國家Singapore
城市Singapore
期間12/03/1915/03/19

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