Comparison of differential and large-signal sensing scheme for subthreshold/superthreshold FinFET SRAM considering variability

Ming Long Fan*, Vita Pi Ho Hu, Yin Nien Chen, Pin Su, Ching Te Chuang

*Corresponding author for this work

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper investigates the viability and compares the merits of small-signal differential sensing and large-signal single-ended sensing scheme for FinFET SRAM under fin Line-Edge-Roughness (fin LER) and Work-Function- Variation (WFV). The local random variation of selected cell, leakage (and its variation) from unselected cells on the selected Bit-Line (BL), and variation of sense amplifier offset voltage (for differential sensing) and trip voltage (for large-signal sensing) are considered simultaneously at subthreshold (V dd=0.4V) and superthreshold (V dd=1.0V) regions. For differential sensing, the subthreshold sensing margin is severely degraded by the variation in Bitline voltage and sufficient time before enabling the sense amplifier is required to improve the limited margin. For large-signal sensing scheme, we show that there is large disparity between the sense "0" margin and sense "1" margin with the significantly worse sense "0" margin limiting the affordable number of cells per Bitline. The possibility of using double-fin PFET in large-signal sensing inverter to improve the sense "0" margin is examined, and shown to be of limited benefit, especially for operation in subthreshold region. Compared with BULK CMOS, the superior electrostatic integrity and variability of FinFET enhances/enables the feasibility of differential sensing in subthreshold/superthreshold SRAM applications.

原文English
主出版物標題2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
DOIs
出版狀態Published - 16 七月 2012
事件2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan
持續時間: 23 四月 201225 四月 2012

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN(列印)1930-8868

Conference

Conference2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012
國家Taiwan
城市Hsinchu
期間23/04/1225/04/12

指紋 深入研究「Comparison of differential and large-signal sensing scheme for subthreshold/superthreshold FinFET SRAM considering variability」主題。共同形成了獨特的指紋。

引用此