Comparison of (111)- and (001)-grown GaAs-AlxGa1-xAs quantum wells by magnetoreflectance

Weimin Zhou*, Doran D. Smith, H. Shen, J. Pamulapati, M. Dutta, Albert Chin, J. Ballingall

*Corresponding author for this work

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Magnetoreflectance studies on GaAs/AlxGa1-xAs quantum wells grown on (111) and (001) substrates have been performed in magnetic fields from 0 to 9 at 4.2K. Excitonic transitions of 1s, 2s, 3s,... states are observed and identified for the transitions from the first heavy-hole subband to the first electron subband and from the first light-hole subband to the first electron subband in the well. From the diamagnetic shifts, we have determined the reduced effective masses, and the binding energies for excitons in the well using several different methods. A comparison of the reduced masses of the excitons in the (111) and (001) samples determined experimentally gives a ratio of 111/001=0.92. We have also attempted to deduce the heavy-hole and light-hole effective masses perpendicular and parallel to the (111) axis, and the band parameters.

原文English
頁(從 - 到)12156-12159
頁數4
期刊Physical Review B
45
發行號20
DOIs
出版狀態Published - 1 一月 1992

指紋 深入研究「Comparison of (111)- and (001)-grown GaAs-AlxGa1-xAs quantum wells by magnetoreflectance」主題。共同形成了獨特的指紋。

引用此