@inproceedings{35463934771043e2a647bf414590d064,
title = "Compact models for sub-22nm MOSFETs",
abstract = "FinFET and UTBSOI (or ETSOI) FET are the two promising multi-gate FET candidates for sub-22nm CMOS technology. The BSIM-CMG and BSIM-IMG are the surface potential based physical compact models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent double-gate MOSFET capturing threshold voltage variation with back gate bias. Both models have been verified by simulation /measurements and show excellent results for all types of real device effects like SCE, DIBL, mobility degradation, poly depletion, QME etc.",
keywords = "BSIM-CMG, BSIM-IMG, Compact model, FinFET, MOSFET, UTBSOI",
author = "Chauhan, {Y. S.} and Lu, {D. D.} and S. Venugopalan and Karim, {M. A.} and A. Niknejad and Chen-Ming Hu",
year = "2011",
month = nov,
day = "23",
language = "English",
isbn = "9781439871393",
series = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",
pages = "720--725",
booktitle = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",
note = "null ; Conference date: 13-06-2011 Through 16-06-2011",
}