Compact modeling of variation in FinFET SRAM cells

Darsen D. Lu, Chung Hsun Lin, Ali M. Niknejad, Chen-Ming Hu

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

Editor's note: FinFET technology is a possible solution to achieve a better power/performance trade-off for SRAM cells. This article provides a comprehensive analysis of the variations in FinFET devices, their impact on SRAM stability, and a statistical design procedure for FinFET SRAM cells.

原文English
文章編號5432322
頁(從 - 到)44-50
頁數7
期刊IEEE Design and Test of Computers
27
發行號2
DOIs
出版狀態Published - 1 三月 2010

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