Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect

Yogendra Sahu, Pragya Kushwaha, Avirup Dasgupta, Chen-Ming Hu, Yogesh Singh Chauhan

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

In this paper, we present an analytical charge-based model for thermal noise power spectral density in fully depleted silicon on insulator (FDSOI) MOSFETs. Two important aspects particular to FDSOI technology, namely, different inversion charges and different effective mobilities at front and back interfaces, are considered in the model. Proposed model is valid from weak to strong inversion regions of operation. Velocity saturation and channel length modulation are also incorporated to properly capture the excess noise in deep submicrometer MOSFETs. To test the quality of the model, standard benchmark tests are performed and asymptotic behavior of the model is validated in all regions of operation. The model is implemented in SPICE and validated with calibrated TCAD simulations as well as with experimental data of high frequency noise for wide range of back biases.

原文English
文章編號7867078
頁(從 - 到)2261-2270
頁數10
期刊IEEE Transactions on Microwave Theory and Techniques
65
發行號7
DOIs
出版狀態Published - 1 七月 2017

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