## 摘要

The combined effects of N _{2}-implantation at S/D extension and N _{2}O oxide on 0.18 μm n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V _{th} roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N _{2}O oxide or N _{2}-implantation. However, for p-channel transistors, opposite trends are observed for N _{2}O oxide and N _{2}-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N _{2}O oxide and N _{2}-implantation.

原文 | English |
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期刊 | Japanese Journal of Applied Physics, Part 2: Letters |

卷 | 38 |

發行號 | 12 A |

DOIs | |

出版狀態 | Published - 1 十二月 1999 |