In this paper, we report the combination effects of nitrogen implantation at S/D extension and N 2 O gate oxide on 0.18 μm n- and p-MOSFETs. It is found that Vt-roll-off is enhanced by nitrogen incorporation which also results in large DIBL in deep submicron device. On the other hand, improvement is found for nitrogen incorporation in terms of junction leakage, reliability, and interfacial quality for nMOSFET. Improvement of Q bd , C inv /C ox and reliability are observed for pMOSFETs.
|出版狀態||Published - 1 一月 1997|
|事件||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China|
持續時間: 3 六月 1997 → 5 六月 1997
|Conference||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications|
|期間||3/06/97 → 5/06/97|