Combination effects of nitrogen implantation at S/D extension and N 2 O oxide on 0.18 μm n- and p-MOSFETs

Tien-Sheng Chao*, Chao-Hsin Chien, S. K. Chiao, Horng-Chih Lin, M. C. Liaw, L. P. Chen, T. Y. Huang, T. F. Lei, C. Y. Chang

*Corresponding author for this work

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this paper, we report the combination effects of nitrogen implantation at S/D extension and N 2 O gate oxide on 0.18 μm n- and p-MOSFETs. It is found that Vt-roll-off is enhanced by nitrogen incorporation which also results in large DIBL in deep submicron device. On the other hand, improvement is found for nitrogen incorporation in terms of junction leakage, reliability, and interfacial quality for nMOSFET. Improvement of Q bd , C inv /C ox and reliability are observed for pMOSFETs.

原文English
頁面316-320
頁數5
出版狀態Published - 1 一月 1997
事件Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
持續時間: 3 六月 19975 六月 1997

Conference

ConferenceProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
城市Taipei, China
期間3/06/975/06/97

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