CMOS voltage reference based on threshold voltage and thermal voltage

Tien Yu Lo, Chung-Chih Hung*, Mohammed Ismail

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

A fully CMOS based voltage reference circuit is presented in this paper. The voltage reference circuit uses the difference between gate-to-source voltages of two MOSFETs operating in the weak-inversion region to generate the voltage with positive temperature coefficient. The reference voltage can be obtained by combining this voltage difference and the extracted threshold voltage of a saturated MOSFET which has a negative temperature coefficient. This circuit, implemented in a standard 0.35-μm CMOS process, provides a nominal reference voltage of 1.361 V at 2-V supply voltage. Experimental results show that the temperature coefficient is 36.7 ppm/°C in the range from -20 to 100°C. It occupies 0.039 mm2 of active area and dissipates 82 μW at room temperature. With a 0.5-μF load capacitor, the measured noise density at 100 Hz and 100 kHz is 3.6 and 25 nV/√ Hz respectively.

原文English
頁(從 - 到)9-15
頁數7
期刊Analog Integrated Circuits and Signal Processing
62
發行號1
DOIs
出版狀態Published - 1 一月 2010

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