CMOS THz generator with frequency selective negative resistance tank

Qun Jane Gu*, Zhiwei Xu, Heng Yu Jian, Bo Pan, Xiaojing Xu, Mau-Chung Chang, Wei Liu, Harold Fetterman

*Corresponding author for this work

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

This paper reports a CMOS terahertz oscillator with a novel frequency selective negative resistance (FSNR) tank to boost its operating frequency. The demonstrated oscillator can operate at a fundamental frequency of about 0.22 THz, exceeding the CMOS device cutoff frequency of ${\rm f} \rm T . The proposed architecture suppresses undesired 2nd and odd harmonics and boosts the fourth-order harmonic (0.87 THz), which radiates through an on-chip patch antenna. The THz oscillator's output spectrum is profiled by using a Michelson interferometer. The oscillator circuit consumes 12 mA from a 1.4 V supply and occupies a 0.045 mm$ 2 die area in a 65 nm CMOS technology.

原文English
文章編號6151215
頁(從 - 到)193-202
頁數10
期刊IEEE Transactions on Terahertz Science and Technology
2
發行號2
DOIs
出版狀態Published - 1 三月 2012

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