Chemical vapor deposition of TiSi nanowires on C54 TiSi2 thin film: An amorphous titanium silicide interlayer assisted nanowire growth

Huang Kai Lin, Hsin An Cheng, Chi Young Lee*, Hsin-Tien Chiu

*Corresponding author for this work

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

A C54-TiSi2 film was grown on a Si substrate at 1073 K by low pressure chemical vapor deposition (LPCVD) employing titanium subchlorides TiClx(g), generated by reacting between TiCl4(g) and Ti(S) at 1173 K, as the Ti source. Growth of titanium suicide (TiSi) nanowires (NWs; diameter 30-80 nm, length several micrometers) on a C54-TiSi2 film was observed. Growth direction of the NWs was determined to be along the [010] axis. An amorphous titanium suicide interlayer was observed between the NWs and the C54-TiSi2 film. This interlayer, probably existing as a quasi-liquid thin film during the growth, appears to be the key factor to assist the NW development. Field emission properties, turn-on field E0 and field enhancement factor β, of the vertically grown TiSi NWs were determined to be 5.25 V μm-1 and 876, respectively.

原文English
頁(從 - 到)5388-5396
頁數9
期刊Chemistry of Materials
21
發行號22
DOIs
出版狀態Published - 24 十一月 2009

指紋 深入研究「Chemical vapor deposition of TiSi nanowires on C54 TiSi<sub>2</sub> thin film: An amorphous titanium silicide interlayer assisted nanowire growth」主題。共同形成了獨特的指紋。

引用此