Chemical vapor deposition growth of bilayer graphene via altering gas flux geometry

Stefan Petrov, Peter M. Rafailov*, Vera Marinova, Shiuan-Huei Lin, Yi Chun Lai, Pei-Chen Yu, Gou Chung Chi, Dimitre Z. Dimitrov, Daniela Karashanova, Marin Gospodinov

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Graphene films with high content of bilayer graphene are obtained by chemical vapor deposition technique on copper (Cu) foil by means of suitably designing the flux geometries of the reactant gases. First single-layer graphene growth is optimized using a preliminary oxygen passivation of the Cu substrate which facilitates the formation of larger graphene grains with low defect density. Then, in order to enhance the transport of reactant species to the catalyst substrate, the gas flux geometry is modified in two ways: (i) fixing a graphite holder next to the Cu substrate perpendicular to the stream of the flux gases or (ii) positioning the Cu foil into a graphite shelter. It is found that both modifications facilitate the growth of a second graphene layer leading to increased formation of bilayer graphene. The obtained graphene layers are characterized by Raman spectroscopy (with special focus on the overtone (2D) of the disorder-induced band), scanning electron microscopy, transmission electron microscopy, atomic force microscope analysis and optical transmission measurements. Narrow symmetric 2D Raman peaks with linewidths ranging down to 22 cm−1 but blue-shifted with respect to that of single-layer graphene are obtained from graphite holder- and shelter-grown samples indicating high-quality bilayer graphene.

原文English
文章編號137521
期刊Thin Solid Films
690
DOIs
出版狀態Published - 30 十一月 2019

指紋 深入研究「Chemical vapor deposition growth of bilayer graphene via altering gas flux geometry」主題。共同形成了獨特的指紋。

引用此