By using a field-effect transistor configuration, we have demonstrated that it is possible to dope electrons or holes into an initially underdoped YBa2Cu3O7-x film at room temperature. The results of systematic measurements of the dual-type transconductance indicate comparable field-effect mobilities for electrons and holes. We propose a model based on band bending and localized electronic states within the band gap of the Mort insulator to explain the dual-type charge transport.
|頁（從 - 到）||5984-5988|
|期刊||Physical Review B - Condensed Matter and Materials Physics|
|出版狀態||Published - 1 九月 2000|