Charge transport in the normal state of electron- or hole-doped YBa2Cu3O7-x

T. Doderer, C. C. Tsuei, Wei Hwang, D. M. Newns

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

By using a field-effect transistor configuration, we have demonstrated that it is possible to dope electrons or holes into an initially underdoped YBa2Cu3O7-x film at room temperature. The results of systematic measurements of the dual-type transconductance indicate comparable field-effect mobilities for electrons and holes. We propose a model based on band bending and localized electronic states within the band gap of the Mort insulator to explain the dual-type charge transport.

原文English
頁(從 - 到)5984-5988
頁數5
期刊Physical Review B - Condensed Matter and Materials Physics
62
發行號9
DOIs
出版狀態Published - 1 九月 2000

指紋 深入研究「Charge transport in the normal state of electron- or hole-doped YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub>」主題。共同形成了獨特的指紋。

引用此