Charge transport in amorphous Hf0.5Zr0.5O2

D. R. Islamov, T. V. Perevalov, V. A. Gritsenko, C. H. Cheng, Albert Chin

研究成果: Article同行評審

24 引文 斯高帕斯(Scopus)

摘要

In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling between traps like in HfO2 and ZrO2. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5Zr0.5O2 were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 was discussed.

原文English
文章編號102906
期刊Applied Physics Letters
106
發行號10
DOIs
出版狀態Published - 9 三月 2015

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