Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer

Tzu Chun Lu, Min Yung Ke, Sheng Chieh Yang, Yun Wei Cheng, Liang Yi Chen, Guan Jhong Lin, Yu Hsin Lu, Jr Hau He, Hao-Chung Kuo, Jian Jang Huang

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

原文English
頁(從 - 到)4109-4111
頁數3
期刊Optics Letters
35
發行號24
DOIs
出版狀態Published - 15 十二月 2010

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