Characterization of plasma charging damage in ultrathin gate oxides

Horng-Chih Lin*, M. F. Wang, C. C. Chen, S. K. Hsien, Chao-Hsin Chien, T. Y. Huang, C. Y. Chang, Tien-Sheng Chao

*Corresponding author for this work

研究成果: Conference article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Charging damage induced in oxides with thickness ranging from 8.7 to 2.5 nm is investigated. Results of charge-to-breakdown (Qbd) measurements performed on control devices indicate that the polarity dependence increases with decreasing oxide thickness at room temperature and elevated temperature (180 °C) conditions. As the oxide thickness is thinned down below 3 nm, the Qbd becomes very sensitive to the stressing current density and temperature. Experimental results show that severe antenna effect would occur during plasma ashing treatment in devices with gate oxides as thin as 2.6 nm. It is concluded that the negative plasma charging and high, process temperature are the key factors responsible for the damage.

原文English
頁(從 - 到)312-317
頁數6
期刊Annual Proceedings - Reliability Physics (Symposium)
DOIs
出版狀態Published - 1 一月 1998
事件Proceedings of the 1998 36th IEEE International Reliability Physics Symposium - Reno, NV, USA
持續時間: 31 三月 19982 四月 1998

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