Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD

Chun-Hsiung Lin*, Hao-Chung Kuo, G. E. Stillman, Haydn Chen

*Corresponding author for this work

研究成果: Conference article同行評審


Highly (100) textured pseudo-cubic Pb(ScTa)1-xTixO3 (x=0-0.3) (PSTT) thin films were grown by metal-organic chemical vapor deposition (MOCVD) on LaNiO3 (LNO) electrode buffered Si substrates at 650°C. The microstructure and chemical uniformity were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nanoprobe X-ray energy dispersive spectroscopy (EDS). The temperature dependence of dielectric properties and P-E behavior were measured. A shift of Curie temperature of these PST-based thin films due to Ti addition was demonstrated. Furthermore, the pyroelectric properties of these thin films were estimated.

頁(從 - 到)679-684
期刊Materials Research Society Symposium - Proceedings
出版狀態Published - 1 一月 1999
事件Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
持續時間: 30 十一月 19983 十二月 1998

指紋 深入研究「Characterization of Pb(ScTa)<sub>1-x</sub>Ti<sub>x</sub>O<sub>3</sub> (x<0.3) thin films grown on LaNiO<sub>3</sub> coated Si By MOCVD」主題。共同形成了獨特的指紋。