Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories

Y. Y. Chen*, T. H. Li, K. T. Kin, Chao-Hsin Chien, J. C. Lou

*Corresponding author for this work

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.

原文English
主出版物標題NanoSingapore 2006
主出版物子標題IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
頁面463-466
頁數4
DOIs
出版狀態Published - 14 十一月 2006
事件2006 IEEE Conference on Emerging Technologies - Nanoelectronics - Singapore, Singapore
持續時間: 10 一月 200613 一月 2006

出版系列

名字NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
2006

Conference

Conference2006 IEEE Conference on Emerging Technologies - Nanoelectronics
國家Singapore
城市Singapore
期間10/01/0613/01/06

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