Characterization of BaPbO3 and Ba(Pb1-xBix)O3 thin films

Chia Liang Sun; Hong Wen Wang; Ming Chu Chang; Meng Suan Lin; San-Yuan Chen

doi:10.1016/S0254-0584(02)00377-2

Characterization of BaPbO₃ and Ba(Pb_1-xBi_x)O₃ thin films

Chia Liang Sun, Hong Wen Wang^*, Ming Chu Chang, Meng Suan Lin, San-Yuan Chen

^*Corresponding author for this work

材料科學與工程學系

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

BaPbO₃ and Ba(Pb_1-xBi_x)O₃ films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO₂/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO₃ phase starts to form above 600 °C and the Pb-excess addition would enhance the formation of single perovskite BaPbO₃ phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Ω sq^-1 (resistivity ≈ 1.07 × 10^-4 Ω cm) could be obtained at 750 °C. However, an annealing temperature over 800 °C causes reactions between substrate and BaPbO₃ phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb_1-xBi_x)O₃ films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Ω sq^-1 at x = 0.3.

原文	English
頁（從 - 到）	507-511
頁數	5
期刊	Materials Chemistry and Physics
卷	78
發行號	2
DOIs	https://doi.org/10.1016/S0254-0584(02)00377-2
出版狀態	Published - 17 二月 2003

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10.1016/S0254-0584(02)00377-2

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引用此

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title = "Characterization of BaPbO3 and Ba(Pb1-xBix)O3 thin films",

abstract = "BaPbO3 and Ba(Pb1-xBix)O3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO3 phase starts to form above 600 °C and the Pb-excess addition would enhance the formation of single perovskite BaPbO3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Ω sq-1 (resistivity ≈ 1.07 × 10-4 Ω cm) could be obtained at 750 °C. However, an annealing temperature over 800 °C causes reactions between substrate and BaPbO3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb1-xBix)O3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Ω sq-1 at x = 0.3.",

keywords = "Barium metaplumbate, Metal-organic deposition, Resistivity, Thin films",

author = "Sun, {Chia Liang} and Wang, {Hong Wen} and Chang, {Ming Chu} and Lin, {Meng Suan} and San-Yuan Chen",

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doi = "10.1016/S0254-0584(02)00377-2",

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T1 - Characterization of BaPbO3 and Ba(Pb1-xBix)O3 thin films

AU - Sun, Chia Liang

AU - Wang, Hong Wen

AU - Chang, Ming Chu

AU - Lin, Meng Suan

AU - Chen, San-Yuan

PY - 2003/2/17

Y1 - 2003/2/17

N2 - BaPbO3 and Ba(Pb1-xBix)O3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO3 phase starts to form above 600 °C and the Pb-excess addition would enhance the formation of single perovskite BaPbO3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Ω sq-1 (resistivity ≈ 1.07 × 10-4 Ω cm) could be obtained at 750 °C. However, an annealing temperature over 800 °C causes reactions between substrate and BaPbO3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb1-xBix)O3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Ω sq-1 at x = 0.3.

AB - BaPbO3 and Ba(Pb1-xBix)O3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO3 phase starts to form above 600 °C and the Pb-excess addition would enhance the formation of single perovskite BaPbO3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Ω sq-1 (resistivity ≈ 1.07 × 10-4 Ω cm) could be obtained at 750 °C. However, an annealing temperature over 800 °C causes reactions between substrate and BaPbO3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb1-xBix)O3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Ω sq-1 at x = 0.3.

KW - Barium metaplumbate

KW - Metal-organic deposition

KW - Resistivity

KW - Thin films

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