Characterization and Comparison of High-k Metal-Insulator-Metal (MiM) Capacitors in 0.13 μm Cu BEOL for Mixed-Mode and RF Applications

Y. L. Tu*, H. L. Lin, L. L. Chao, Danny Wu, C. S. Tsai, C. Wang, C. F. Huang, C. H. Lin, Jack Sun

*Corresponding author for this work

研究成果: Conference article同行評審

53 引文 斯高帕斯(Scopus)

摘要

In this paper, we report high-k MiM capacitors including Ta 2O5, TaOxNy, HfO2, Al2O3 and Ta2O5/Al2O 3 stack layer integrated in 0.13 μm 8-level Cu-metallization technology using Cu barrier as both top and bottom electrodes. Ta 2O5 exhibits excellent voltage and temperature linearity of capacitance. Al2O3 shows low leakage but poor voltage and temperature linearity. Voltage linearity could be significantly affected by high-k deposition temperature. We present high-k MiM capacitors with voltage linearity as low as 25 ppm/V and 133 ppm/V2.

原文English
頁(從 - 到)79-80
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
DOIs
出版狀態Published - 2003
事件2003 Symposium on VLSI Technology - Kyoto, Japan
持續時間: 10 六月 200312 六月 2003

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