Characteristics of polysilicon oxides combining N 2O nitridation and CMP processes

Tan Fu Lei, Jiann Heng Chen, Ming Fang Wang, Tien-Sheng Chao

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

This paper present a high-quality polysilicon oxide combining N 2O nitridation and chemical mechanical polishing (CMP) processes. Experimental results indicate that polyoxide grown on the CMP sample exhibits a lower leakage current, higher dielectric breakdown field, higher electron barrier height, less electron trapping rate, higher charge-to-breakdown (Q bd), and lower density of trapping charge than those of non-CMP samples. In addition, the CMP process enhances nitrogen incorporation at the interface by the N 2O nitridation, ultimately improving the polyoxide quality. Moreover, the CMP process smooths the surface of polysilicon and this planar surface reduces the out-diffusion of the phosphorous during thermal oxidation.

原文English
頁(從 - 到)1545-1552
頁數8
期刊IEEE Transactions on Electron Devices
47
發行號8
DOIs
出版狀態Published - 1 八月 2000

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