Characteristics of polycrystalline silicon thin-film transistors with thin oxide/nitride gate structures

Huang-Chung Cheng*, Ya-Hsiang Tai, Ming Shiann Feng, Jau Jey Wang

*Corresponding author for this work

研究成果: Article同行評審

摘要

The characteristics of polycrystalline silicon thin-film transistors are analyzed. Display technologies, thermal oxides as gate dielectrics. Polycrystalline silicon thin-film transistor (TFTs) device fabrication is described, and results of research investigations on thermal oxides as gate dielectrics.

原文English
頁(從 - 到)1798-1802
頁數5
期刊Optical Engineering
32
發行號8
DOIs
出版狀態Published - 1 一月 1993

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