Characteristics of planar junctionless poly-Si thin-film transistors with various channel thickness

Horng-Chih Lin*, Cheng I. Lin, Zer Ming Lin, Bo Shiuan Shie, Tiao Yuan Huang

*Corresponding author for this work

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

N-type junctionless (JL) planar poly-Si thin-film transistors (TFTs), which contain an in situ heavily phosphorous-doped channel with thickness ranging from 8 to 12 nm, were fabricated and characterized. The devices exhibit superior current drive and good control over performance variability. From $C$- $V$ characterization, the ionized dopant concentration in the channel is determined to be around 2 \times \hbox{10}^{19} \ \hbox{cm}-3 and the fixed charge density to be around $-6 \times \hbox{10}^{12} \ \hbox{cm}-2. The negative fixed charge density is probably related to the segregation of phosphorous species at the oxide/channel interface. We also observed a reverse short-channel effect from the relationship between the threshold voltage and the channel length. One mechanism considering enhanced phosphorous segregation is proposed to explain this finding.

原文English
文章編號6428639
頁(從 - 到)1142-1148
頁數7
期刊IEEE Transactions on Electron Devices
60
發行號3
DOIs
出版狀態Published - 5 二月 2013

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