Characteristics of photogenerated bipolar terahertz radiation in biased photoconductive switches

Po Lem Lin; Shyh Feng Chen; Kaung-Hsiung Wu; Jenh-Yih Juang; Tseng Ming Uen; Yih Shung Gou

doi:10.1143/JJAP.41.L1158

Characteristics of photogenerated bipolar terahertz radiation in biased photoconductive switches

Po Lem Lin^*, Shyh Feng Chen, Kaung-Hsiung Wu, Jenh-Yih Juang, Tseng Ming Uen, Yih Shung Gou

^*Corresponding author for this work

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The characteristics of the optically induced bipolar terahertz (THz) radiation from biased semi-insulating GaAs photoconductive switches were investigated using a free-space electrooptic sampling technique. The emitted radiation shows a nearly symmetrical waveform with a broad-band frequency spectrum spanning over 0.1-3 THz, which displays essentially no dependence on the optical excitation fluence or strength of biased field. However, it does slightly depend on the emitter gap spacing. The dynamics of the emitted THz transient is in agreement with the optically induced ultrafast charge transport process driven by the biased field.

原文	English
頁（從 - 到）	L1158-L1160
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	41
發行號	10 B
DOIs	https://doi.org/10.1143/JJAP.41.L1158
出版狀態	Published - 15 十月 2002

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10.1143/JJAP.41.L1158

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abstract = "The characteristics of the optically induced bipolar terahertz (THz) radiation from biased semi-insulating GaAs photoconductive switches were investigated using a free-space electrooptic sampling technique. The emitted radiation shows a nearly symmetrical waveform with a broad-band frequency spectrum spanning over 0.1-3 THz, which displays essentially no dependence on the optical excitation fluence or strength of biased field. However, it does slightly depend on the emitter gap spacing. The dynamics of the emitted THz transient is in agreement with the optically induced ultrafast charge transport process driven by the biased field.",

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AU - Uen, Tseng Ming

AU - Gou, Yih Shung

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