Characteristics of p-type GaN films doped with isoelectronic indium atoms

F. C. Chang*, K. C. Shen, H. M. Chung, M. C. Lee, W. H. Chen, Wei-Kuo Chen

*Corresponding author for this work

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 × 1017 cm-3 and ∼ Ω-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.

原文English
頁(從 - 到)637-643
頁數7
期刊Chinese Journal of Physics
40
發行號6
出版狀態Published - 1 十二月 2002

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