The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 × 1017 cm-3 and ∼ Ω-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.
|頁（從 - 到）||637-643|
|期刊||Chinese Journal of Physics|
|出版狀態||Published - 1 十二月 2002|