Characteristics of n-type planar junctionless poly-si thin-film transistors

C. I. Lin, Horng-Chih Lin, T. Y. Huang

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this work, we study the electrical characteristics of planar poly- Si junctionless (JL) thin-film transistors (TFTs) with 10 nm-thick channel and various gate width. The output current of JL devices is drastically larger than that of the control device with an undoped channel, owing to the abundant carriers contained in the channel of the JL devices which tends to reduce both channel and source/drain series resistances. Subthreshold swing of the JL devices is found to be larger than the control ones, owing to the existence of a depletion layer in the channel. Nonetheless, excellent on/off current ratio (>107) is achieved, thanks to the use of the ultra-thin channel.

原文English
主出版物標題Thin Film Transistors 11, TFT 2012
頁面23-28
頁數6
版本8
DOIs
出版狀態Published - 1 十二月 2012
事件11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States
持續時間: 8 十月 201210 十月 2012

出版系列

名字ECS Transactions
號碼8
50
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
國家United States
城市Honolulu, HI
期間8/10/1210/10/12

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