Characteristics of Modified-Schottky-Barrier (MSB) FinFETs

Chia Pin Lin*, Bing-Yue Tsui

*Corresponding author for this work

研究成果: Conference contribution

10 引文 斯高帕斯(Scopus)

摘要

It has been reported that Modified-Schottky-Barrier (MSB) FinFET can solve the problem of low on-state/off-state current ratio that the conventional SB MOSFETs have. In this work, we report for the first time that high performance n- and p-channel MSB devices can be fabricated with the same metal silicide and process technique. Detailed device characteristics as well as hot carrier reliability of MSB FinFETs are investigated. It is concluded that the high performance MSB FinFET is also highly reliable. The simple process and low thermal budget features make the MSB FinFET a very promising nano device.

原文English
主出版物標題2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers
頁面118-119
頁數2
DOIs
出版狀態Published - 31 十月 2005
事件2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH - Hsinchu, Taiwan
持續時間: 25 四月 200527 四月 2005

出版系列

名字2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Conference

Conference2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH
國家Taiwan
城市Hsinchu
期間25/04/0527/04/05

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  • 引用此

    Lin, C. P., & Tsui, B-Y. (2005). Characteristics of Modified-Schottky-Barrier (MSB) FinFETs. 於 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers (頁 118-119). [T76] (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers). https://doi.org/10.2514/1.4652