Characteristics of MIS solar cells using sputtering SiO2 insulating layers

Tzu Yueh Chang*, Chun Lung Chang, Hsin Yu Lee, Po-Tsung Lee

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this study, the characteristics of both p-type and ntype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO2 insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO2 insulating layer and a hydrogen (H 22) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO2 insulating layer can be greatly enhanced by depositing a SiNx passivation layer on top. It suggests that a sputtering SiO2 insulating layer is a good alternative insulating layer for MIS solar cells.

原文English
主出版物標題Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
頁面1318-1321
頁數4
DOIs
出版狀態Published - 20 十二月 2010
事件35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
持續時間: 20 六月 201025 六月 2010

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(列印)0160-8371

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
國家United States
城市Honolulu, HI
期間20/06/1025/06/10

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