Characteristics of low-k methyl-silsesquiazane (MSZ) for CMP process using oxygen plasma pretreatment

Po-Tsun Liu*, TC Chang, TM Tsai, ST Yan, YC Chang, H Aoki, TY Tseng

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

In this work, the effect of oxygen (O-2) plasma treatment on methylsilesequiazane (MSZ) dielectric was investigated for CMP process. The low-dielectric-constant (low-kappa) MSZ were prepared by spin-on glass (SOG) process. The resultant wafers were followed by O-2-plasma treatment. After O-2-plasma treatment, the CMP process was implemented. Electrical and material analyses were utilized to explore the characteristics of post-CMP MSZ. Experimental results showed that the polish rate of MSZ film with O-2 plasma pre-treatment was increased as much as twice magnitudes than that of the MSZ without O-2-plasma pre-treatment. In addition, the post-CMP MSZ exhibited superior electrical properties. These results clearly indicated the modification surfaces resulted from O-2-plasma treatment facilitated CMP MSZ, and after CMP polishing, the MSZ film still maintained low-k quality.

原文English
主出版物標題THIN FILM MATERIALS, PROCESSES, AND RELIABILITY
編輯GS Mathad
發行者ELECTROCHEMICAL SOC INC
頁面237-243
頁數7
ISBN(列印)1-56677-393-8
出版狀態Published - 四月 2003
事件International Symposium on Thin Film Materials, Processes and Reliability - PARIS, France
持續時間: 27 四月 20032 五月 2003

出版系列

名字Electrochemical Society Series
發行者ELECTROCHEMICAL SOC INC
2003
ISSN(列印)0275-0171

Conference

ConferenceInternational Symposium on Thin Film Materials, Processes and Reliability
國家France
城市PARIS
期間27/04/032/05/03

引用此