Characteristics of 850 nm gaas/algaas qw leds with asymmetric photonic-crystal structure

Hung Pin D. Yang, Zao En Yeh, Fang I. Lai, Hao-Chung Kuo, Rong Xuan, Jim Y. Chi

研究成果: Article

摘要

GaAs/Alo.3Gao.7As quantum-well LEDs with an asymmetric photonic-crystal structure in the 850 nm range is reported. The device consists of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a photonic-crystal structure formed within the p-type ohmic contact ring for light extraction. The collimated light output was obtained using an asymmetric photonic-crystal structure for light extraction. The spontaneous emission can be transmitted out of photonic-crystal air-holes.

原文English
頁(從 - 到)327-332
頁數6
期刊International Journal of Electrical Engineering
16
發行號4
出版狀態Published - 1 八月 2009

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