GaAs/Alo.3Gao.7As quantum-well LEDs with an asymmetric photonic-crystal structure in the 850 nm range is reported. The device consists of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a photonic-crystal structure formed within the p-type ohmic contact ring for light extraction. The collimated light output was obtained using an asymmetric photonic-crystal structure for light extraction. The spontaneous emission can be transmitted out of photonic-crystal air-holes.
|頁（從 - 到）||327-332|
|期刊||International Journal of Electrical Engineering|
|出版狀態||Published - 1 八月 2009|