Characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants from source/drain extensions

Wen Li Sung, Yiming Li

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this work, characteristic fluctuation of undoped gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) penetrating from the source/drain (S/D) extensions is explored. Compared with the results of RDDs penetrating from the S extension, asymmetric variations of characteristics induced by RDDs penetrating from the D extension are suppressed owing to the different extent of screening effect on the surface of channel; in particular, the fluctuations of voltage gain and cut-off frequency are reduced from 24% and 21% to 7% and 10%, respectively, because of the effective fluctuation reduction of maximum transconductance near the D extension.

原文English
主出版物標題Informatics, Electronics and Microsystems - TechConnect Briefs 2017
編輯Fiona Case, Matthew Laudon, Bart Romanowicz, Fiona Case
發行者TechConnect
頁面43-46
頁數4
ISBN(電子)9780998878218
出版狀態Published - 2017
事件11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States
持續時間: 14 五月 201717 五月 2017

出版系列

名字Advanced Materials - TechConnect Briefs 2017
4

Conference

Conference11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
國家United States
城市Washington
期間14/05/1717/05/17

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