Channel doping engineering of MOSFET with adaptable threshold voltage using body effect for low voltage and low power applications

H. Clement Wann*, Chen-Ming Hu, Kenji Noda, Dennis Sinitsky, Fariborz Assaderaghi, Jeff Bokor

*Corresponding author for this work

研究成果: Paper

16 引文 斯高帕斯(Scopus)

摘要

With the scaling of the power supply voltage VDD in low voltage and low power VLSI, the threshold voltage of the MOSFET device needs to be reduced to retain the device performance in terms of current driving capability and switching speed. Recently MOSFET devices whose threshold voltages can be adapted during the transistor operation using the body effect have been proposed for low voltage and low power VLSI applications. In these devices, the threshold voltages are reduced by forward-biasing the body-to-source junction. In this paper we study the effect of the channel doping engineering on this threshold voltage reduction scheme.

原文English
頁面159-163
頁數5
出版狀態Published - 1 十二月 1995
事件Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
持續時間: 31 五月 19952 六月 1995

Conference

ConferenceProceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications
城市Taipei, Taiwan
期間31/05/952/06/95

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