Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs

Hong Nien Lin*, Hung Wei Chen, Chih Hsin Ko, Chung Hu Ge, Horng-Chih Lin, Tiao Yuan Huang, Wen Chin Lee

*Corresponding author for this work

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in sub-100-nm devices, strain-induced modulation of carrier mean-free path for backscattering and reduction in kBT layer thickness are responsible for the different behaviors of backscattering ratio. Nevertheless, the source-side injection velocity improves irrespective of the strain polarities. The impact of channel backscattering ratio on drive current is also analyzed in terms of ballistic efficiency and injection velocity.

原文English
頁(從 - 到)676-678
頁數3
期刊IEEE Electron Device Letters
26
發行號9
DOIs
出版狀態Published - 1 九月 2005

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