Cerium oxide nanocrystals for nonvolatile memory applications

Shao Ming Yang*, Chao-Hsin Chien, Jiun Jia Huang, Tan Fu Lei, Ming Jinn Tsai, Lurng Shehng Lee

*Corresponding author for this work

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin Ce O2 film on the Si O2 tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density of the Ce O2 nanocrystals embedded in Si O2 are estimated to be about 8-10 nm and (3-7) × 1011 cm-2 after a high-temperature annealing with different ambients on 900 °C. The program/erase behaviors and data retention characteristics were described to demonstrate its advantages for nonvolatile memory device applications.

原文English
文章編號262104
期刊Applied Physics Letters
91
發行號26
DOIs
出版狀態Published - 1 十二月 2007

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