Carrier dynamics in dilute II-VI oxide highly mismatched alloys

Yan Cheng Lin, Wu-Ching Chou, Jen Inn Chyi, Tooru Tanaka

研究成果: Conference contribution同行評審

摘要

This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.

原文English
主出版物標題Oxide-Based Materials and Devices V
發行者SPIE
ISBN(列印)9780819499004
DOIs
出版狀態Published - 1 一月 2014
事件5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United States
持續時間: 2 二月 20145 二月 2014

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8987
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Conference

Conference5th Annual Oxide Based Materials and Devices Conference
國家United States
城市San Francisco, CA
期間2/02/145/02/14

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