Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes

Jenn-Fang Chen*, P. Y. Wang, J. S. Wang, C. Y. Tsai, N. C. Chen

*Corresponding author for this work

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around the InGaAs region for relaxed samples cannot be obtained from capacitance-voltage data but from resistance-capacitance time constant effect observed in capacitance-frequency measurement. A trap at 0.33 to 0.49 eV is observed for relaxed samples by deep-level transient spectroscopy. The resistance caused by carrier depletion has an activation energy close to that of the trap, supporting that the carrier depletion is caused by capture from the trap.

原文English
頁(從 - 到)1369-1373
頁數5
期刊Journal of Applied Physics
87
發行號3
DOIs
出版狀態Published - 1 二月 2000

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