Capturing H and H2 by SiHx + (x ≤ 4) ions: Comparison between Langevin and quantum statistical models

Trong Nghia Nguyen, Yun Min Lee, Jong-Shinn Wu, Ming-Chang Lin*

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

H, H2, and SiHx + (x ≤ 4) ions coexist under plasma-enhanced chemical vapor deposition (PECVD) conditions. We have studied the kinetics of their interactions by high-level quantum chemical and statistical theory calculations, and compared the results with classical Langevin values (∼2 × 10-9 cm3 molecule-1 s-1 independent of temperature). The results indicate that, for H capturing by SiHx + (x ≤ 4), both theories agree within a factor of 2-4, whereas for H2 capturing by SiHx + (x ≤ 3), the modern theory gives higher and weakly temperature-dependent values by up to more than one order of magnitude, attributable to reaction path degeneracies and increased entropies of activation. The heats of formation and structural parameters of SiHx + ions (x ≤ 5) in this work agree well with available experimental data. For practical applications, we have provided tables of rate constants for modeling various processes of relevance to the PECVD of a-Si:H films.

原文English
文章編號026101
期刊Japanese Journal of Applied Physics
56
發行號2
DOIs
出版狀態Published - 1 二月 2017

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